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FEATURES Excellent Noise Performance: 1.0 nV//Hz or 1.5 dB Noise Figure Ultra-low THD: < 0.01% @ G = 100 Over the Full Audio Band Wide Bandwidth: 1 MHz @ G = 100 High Slew Rate: 16 V/ s @ G = 10 10 V rms Full-Scale Input, G = 1, VS = 18 V Unity Gain Stable True Differential Inputs Subaudio 1/f Noise Corner 8-Lead PDIP or 16-Lead SOIC Only One External Component Required Very Low Cost Extended Temperature Range: -40 C to +85 C APPLICATIONS Audio Mix Consoles Intercom/Paging Systems 2-Way Radio Sonar Digital Audio Systems
Self-Contained Audio Preamplifier SSM2019
FUNCTIONAL BLOCK DIAGRAM
V+
V- +IN -IN RG1 RG2 5k 5k 5k REFERENCE V- 5k 1 5k 5k 1
OUT
PIN CONNECTIONS 8-Lead PDIP (N Suffix) 8-Lead Narrow Body SOIC (RN Suffix)*
GENERAL DESCRIPTION
The SSM2019 is a latest generation audio preamplifier, combining SSM preamplifier design expertise with advanced processing. The result is excellent audio performance from a monolithic device, requiring only one external gain set resistor or potentiometer. The SSM2019 is further enhanced by its unity gain stability. Key specifications include ultra-low noise (1.5 dB noise figure) and THD (<0.01% at G = 100), complemented by wide bandwidth and high slew rate. Applications for this low cost device include microphone preamplifiers and bus summing amplifiers in professional and consumer audio equipment, sonar, and other applications requiring a low noise instrumentation amplifier with high gain capability.
RG1 1 -IN 2
8
RG2
V+ TOP VIEW +IN 3 (Not to Scale) 6 OUT
7
SSM2019
V- 4
5
REFERENCE
16-Lead Wide Body SOIC (RW Suffix)
NC 1 RG1 2 NC 3 -IN 4
16 NC 15 RG2 14 NC
13 V+ TOP VIEW +IN 5 (Not to Scale) 12 NC
SSM2019
NC 6 V- 7 NC 8
11 OUT 10 REFERENCE 9
NC
NC = NO CONNECT
*Consult factory for availability.
REV. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective companies.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 (c) 2003 Analog Devices, Inc. All rights reserved.
-40 SSM2019-SPECIFICATIONS (V = at15 V=and C.) C T +85 C, unless otherwise noted. Typical specifications apply T 25
S A A
Parameter DISTORTION PERFORMANCE Total Harmonic Distortion Plus Noise
Symbol
Conditions VO = 7 V rms RL = 2 kW f = 1 kHz, G = 1000 f = 1 kHz, G = 100 f = 1 kHz, G = 10 f = 1 kHz, G = 1 BW = 80 kHz f = 1 kHz, G = 1000 f = 1 kHz, G = 100 f = 1 kHz, G = 10 f = 1 kHz, G = 1 f = 1 kHz, G = 1000 G = 10 RL = 2 kW CL = 100 pF G = 1000 G = 100 G = 10 G=1
Min
Typ
Max
Unit
THD + N
0.017 0.0085 0.0035 0.005
% % % %
NOISE PERFORMANCE Input Referred Voltage Noise Density
en
Input Current Noise Density DYNAMIC RESPONSE Slew Rate Small Signal Bandwidth
in SR BW-3 dB
1.0 1.7 7 50 2 16 200 1000 1600 2000 0.05 0.25 3 10 0.001 1.0 110 90 70 50 110 110 90 70 12 130 113 94 74 124 118 101 82 1 30 5.3 7.1 13.9 4 30 5000 50 Continuous
nV//Hz nV//Hz nV//Hz nV//Hz pA//Hz V/ms kHz kHz kHz kHz mV mA mA dB dB dB dB dB dB dB dB V MW MW MW MW V mV pF mA sec
INPUT Input Offset Voltage Input Bias Current Input Offset Current Common-Mode Rejection
VIOS IB Ios CMR
Power Supply Rejection
PSR
VCM = 0 V VCM = 0 V VCM = 12 V G = 1000 G = 100 G = 10 G=1 VS = 5 V to 18 V G = 1000 G = 100 G = 10 G=1 Differential, G = 1000 G=1 Common Mode, G = 1000 G=1 RL = 2 kW, TA = 25C Output-to-Ground Short
Input Voltage Range Input Resistance
IVR RIN
OUTPUT Output Voltage Swing Output Offset Voltage Maximum Capacitive Load Drive Short Circuit Current Limit Output Short Circuit Duration GAIN Gain Accuracy
VO VOOS ISC
13.5
RG =
10 kW G-1
TA = 25C RG = 10 W, G = 1000 RG = 101 W, G = 100 RG = 1.1 kW, G = 10 RG = , G = 1
0.5 0.5 0.5 0.1
Maximum Gain REFERENCE INPUT Input Resistance Voltage Range Gain to Output POWER SUPPLY Supply Voltage Range Supply Current
Specifications subject to change without notice.
G
0.1 0.2 0.2 0.2 70 10 12 1
dB dB dB dB dB kW V V/V 18 7.5 8.5 V mA mA
VS ISY
VCM = 0 V, RL = VCM = 0 V, VS = 18 V, RL =
5
4.6 4.7
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REV. 0
SSM2019
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 V Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . Supply Voltage Output Short Circuit Duration . . . . . . . . . . . . . . . . . . . 10 sec Storage Temperature Range . . . . . . . . . . . . -65C to +150C Junction Temperature (TJ) . . . . . . . . . . . . . -65C to +150C Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300C Operating Temperature Range . . . . . . . . . . . -40C to +85C Thermal Resistance2 8-Lead PDIP (N) . . . . . . . . . . . . . . . . . . . . . . . JA = 96C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . JC = 37C/W 16-Lead SOIC (RW) . . . . . . . . . . . . . . . . . . . . JA = 92C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . JC = 27C/W
NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
2
ABSOLUTE MAXIMUM RATINGS 1
ORDERING GUIDE
Model SSM2019BN SSM2019BRW SSM2019BRWRL SSM2019BRN* SSM2019BRNRL* Temperature Range -40C to +85C -40C to +85C -40C to +85C -40C to +85C -40C to +85C Package Description 8-Lead PDIP 16-Lead SOIC 16-Lead SOIC, Reel 8-Lead SOIC 8-Lead SOIC, Reel Package Option N-8 RW-16 RW-16 RN-8 RN-8
*Consult factory for availability.
qJA is specified for worst-case mounting conditions, i.e., qJA is specified for device in socket for PDIP; qJA is specified for device soldered to printed circuit board for SOIC package.
CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the SSM2019 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
Typical Performance Characteristics
0.1
100
G = 1000 0.01 G = 100 G=1 G = 10
RTI, VOLTAGE NOISE DENSITY - nV/ Hz
TA = 25 C VS = 15V G = 1000
10
THD + N - %
0.001 15V VS 7Vrms VO RL 600 BW = 80kHz 0.0001 10 20 18V 10Vrms
1
0.1
1k FREQUENCY - Hz 10k 20k
100
1
10
100 FREQUENCY - Hz
1k
10k
TPC 1. Typical THD + Noise vs. Gain
TPC 2. Voltage Noise Density vs. Frequency
REV. 0
-3-
SSM2019
100
RTI VOLTAGE NOISE DENSITY - nV/ Hz
TA = 25 C VS = 15V
100 90
PEAK-TO-PEAK VOLTAGE - V
30 GAIN 25 10
80
10
IMPEDANCE -
GAIN = 1
70 60 50 40 30 20 10
f = 1kHz OR 10kHz
20
1
TA = 25 C RL = 2k VS = 15V
15
0.1
1
10 GAIN
100
1k
0 100
1k
10k 100k FREQUENCY - Hz
1M
10 100
1k
10k 100k FREQUENCY - Hz
1M
TPC 3. RTI Voltage Noise Density vs. Gain
TPC 4. Output Impedance vs. Frequency
TPC 5. Maximum Output Swing vs. Frequency
16
OUTPUT VOLTAGE - V
12 10 8 6 4 2 0 10
G=1
OUTPUT SWING (VOUT+ - VOUT-) - V
TA = 25 C 14 VS = 15V
40
G 10
20
TA = 25 C f = 100kHz
TA = 25 C
INPUT SWING (VIN+ - VIN-) - V
30
15
20
10
10
5
1k 10k 100 LOAD RESISTANCE -
100k
0 0 10 20 30 40 SUPPLY VOLTAGE (V+ - V-) - V
0 0 10 30 20 SUPPLY VOLTAGE (V+ - V-) - V 40
TPC 6. Output Voltage vs. Load Resistance
TPC 7. Input Voltage Range vs. Supply Voltage
TPC 8. Output Voltage Range vs. Supply Voltage
200
VCM = 100mV 180 VS = 15V TA = 25 C 160 140 G = 1000 G = 100 G = 10 G=1
150 G = 1000 125 G = 10 100
+PSRR - dB
150 G = 1000 125
G = 100
G = 10 100
-PSRR - dB
G = 100
CMRR - dB
G=1
120 100 80 60 40 20 0 10
75 G=1 50 VCM = 100mV TA = 25 C VS = 15V 100 1k 10k FREQUENCY - Hz 100k
75
50 VS = 100mV TA = 25 C VS = 15V 100 1k 10k FREQUENCY - Hz 100k
25
25
100
1k
10k
100k
0 10
0 10
FREQUENCY- Hz
TPC 9. CMRR vs. Frequency
TPC 10. Positive PSRR vs. Frequency
TPC 11. Negative PSRR vs. Frequency
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REV. 0
SSM2019
0.040 V+/V- = 0.035 0.030 15V
0.02 TA = 25 C 0.01 0
0 V+/V- = -1 -2 15V
0.020 0.015 0.010 0.005 0 -50
VOOS - mV
0 5 10 15 20 25 30 35 SUPPLY VOLTAGE (VCC - VEE) - V 40
VIOS - mV
VIOS - mV
0.025
-0.01 -0.02 -0.03 -0.04 -0.05
-3 -4 -5 -6 -7 -8 -50
-25
0 25 50 TEMPERATURE - C
75
100
-0.06
-25
25 0 50 TEMPERATURE - C
75
100
TPC 12. VIOS vs. Temperature
TPC 13. VIOS vs. Supply Voltage
TPC 14. VOOS vs. Temperature
30 TA = 25 C 20
5 V+/V- = 4 15V
6 TA = 25 C 5
10
VOOS - mV
4
IB - A
IB+ OR IB- 2
IB - A
3
0
3
-10
1
2
-20
0 -50
1
-30 0 5 10 15 20 25 30 35 SUPPLY VOLTAGE (VCC - VEE) - V 40
0
-25 0 25 50 TEMPERATURE - C 75 100
0
10 20 30 SUPPLY VOLTAGE (VCC - VEE) - V
40
TPC 15. VOOS vs. Supply Voltage
TPC 16. IB vs. Temperature
TPC 17. IB vs. Supply Voltage
8 6 I+ @ V+/V- =
SUPPLY CURRENT - mA
8 TA = 25 C 6 18V SUPPLY CURRENT - mA 4 2 0 -2 -4 -6 -8 -25 0 25 50 TEMPERATURE - C 75 100 I- 15V I+
SUPPLY CURRENT - mA
16 TA = 25 C 14 12 10 8 6 4 2
4 I+ @ V+/V- = 2 0 -2 -4 -6 -8 -50 I- @ V+/V- = I- @ V+/V- = 18V 15V
0
5
10
15
20
25
30
35
40
0 0 10 15 5 SUPPLY VOLTAGE - V 20
SUPPLY VOLTAGE (VCC - VEE) - V
TPC 18. Supply Current vs. Temperature
TPC 19. Supply Current vs. Supply Voltage
TPC 20. ISY vs. Supply Voltage
REV. 0
-5-
SSM2019
V+
VS = 15V TA = 25 C
+IN RG
SSM2019
RG2
OUT REFERENCE
-IN
VOLTAGE GAIN - dB
RG1
60 40 20 0
G=
VOUT (+IN) - (- IN)
=
10k RG
+1
V-
Figure 1. Basic Circuit Connections
GAIN
The SSM2019 only requires a single external resistor to set the voltage gain. The voltage gain, G, is:
G= 10 kW +1 RG
10 kW G -1
1k
10k
100k
1M
10M
Figure 2. Bandwidth for Various Values of Gain
NOISE PERFORMANCE
and the external gain resistor, RG , is:
RG =
For convenience, Table I lists various values of RG for common gain levels.
Table I. Values of RG for Various Gain Levels
RG ( ) AV NC 4.7 k 1.1 k 330 100 32 10 1 3.2 10 31.3 100 314 1000
dB 0 10 20 30 40 50 60
The SSM2019 is a very low noise audio preamplifier exhibiting a typical voltage noise density of only 1 nV//Hz at 1 kHz. The exceptionally low noise characteristics of the SSM2019 are in part achieved by operating the input transistors at high collector currents since the voltage noise is inversely proportional to the square root of the collector current. Current noise, however, is directly proportional to the square root of the collector current. As a result, the outstanding voltage noise performance of the SSM2019 is obtained at the expense of current noise performance. At low preamplifier gains, the effect of the SSM2019 voltage and current noise is insignificant. The total noise of an audio preamplifier channel can be calculated by:
E n = e n 2 + ( i n RS )2 + e t 2
where: En = total input referred noise en = amplifier voltage noise in = amplifier current noise RS = source resistance et = source resistance thermal noise For a microphone preamplifier, using a typical microphone impedance of 150 W, the total input referred noise is:
E n = (1 nV Hz )2 + 2( pA / Hz 150 W)2 + (1.6 nV / Hz )2 = 1.93 nV / Hz @ 1 kHz
The voltage gain can range from 1 to 3500. A gain set resistor is not required for unity gain applications. Metal film or wire-wound resistors are recommended for best results. The total gain accuracy of the SSM2019 is determined by the tolerance of the external gain set resistor, RG, combined with the gain equation accuracy of the SSM2019. Total gain drift combines the mismatch of the external gain set resistor drift with that of the internal resistors (20 ppm/C typ). Bandwidth of the SSM2019 is relatively independent of gain, as shown in Figure 2. For a voltage gain of 1000, the SSM2019 has a small-signal bandwidth of 200 kHz. At unity gain, the bandwidth of the SSM2019 exceeds 4 MHz.
where: en = 1 nV//Hz @ 1 kHz, SSM2019 en in = 2 pA//Hz @ 1 kHz, SSM2019 in RS = 150 W, microphone source impedance et = 1.6 nV//Hz @ 1 kHz, microphone thermal noise This total noise is extremely low and makes the SSM2019 virtually transparent to the user.
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REV. 0
SSM2019
INPUTS
The SSM2019 has protection diodes across the base emitter junctions of the input transistors. These prevent accidental avalanche breakdown, which could seriously degrade noise performance. Additional clamp diodes are also provided to prevent the inputs from being forced too far beyond the supplies.
(INVERTING)
TRANSDUCER (NONINVERTING)
SSM2019
Although the SSM2019 inputs are fully floating, care must be exercised to ensure that both inputs have a dc bias connection capable of maintaining them within the input common-mode range. The usual method of achieving this is to ground one side of the transducer as in Figure 3a. An alternative way is to float the transducer and use two resistors to set the bias point as in Figure 3b. The value of these resistors can be up to 10 kW, but they should be kept as small as possible to limit common-mode pickup. Noise contribution by resistors is negligible since it is attenuated by the transducer's impedance. Balanced transducers give the best noise immunity and interface directly as in Figure 3c. For stability, it is required to put an RF bypass capacitor directly across the inputs, as shown in Figures 3 and 4. This capacitor should be placed as close as possible to the input terminals. Good RF practice should also be followed in layout and power supply bypassing, since the SSM2019 uses very high bandwidth devices.
REFERENCE TERMINAL
a. Single-Ended
R
TRANSDUCER
R
SSM2019
b. Pseudo-Differential
The output signal is specified with respect to the reference terminal, which is normally connected to analog ground. The reference may also be used for offset correction or level shifting. A reference source resistance will reduce the common-mode rejection by the ratio of 5 kW/RREF. If the reference source resistance is 1 W, then the CMR will be reduced to 74 dB (5 kW/1 W = 74 dB).
COMMON-MODE REJECTION
TRANSDUCER
SSM2019
c. True Differential Figure 3. Three Ways of Interfacing Transducers for High Noise Immunity
Ideally, a microphone preamplifier responds to only the difference between the two input signals and rejects common-mode voltages and noise. In practice, there is a small change in output voltage when both inputs experience the same common-mode voltage change; the ratio of these voltages is called the common-mode gain. Common-mode rejection (CMR) is the logarithm of the ratio of differential-mode gain to common-mode gain, expressed in dB.
PHANTOM POWERING
A typical phantom microphone powering circuit is shown in Figure 4. Z1 to Z4 provide transient overvoltage protection for the SSM2019 whenever microphones are plugged in or unplugged.
+48V
C1 +IN R3 6.8k 1% R1 10k Z1 Z2 Z3 Z4 C4 200pF
+18V
R5 100
RG1 RG
SSM2019
RG2
VOUT
C3 47 F -IN
R4 6.8k 1% C2
R2 10k
-18V
C1, C2: 22 F TO 47 F, 63V, TANTALUM OR ELECTROLYTIC Z1-Z4: 12V, 1/2W
Figure 4. SSM2019 in Phantom Powered Microphone Circuit
REV. 0
-7-
SSM2019
BUS SUMMING AMPLIFIER
In addition to its use as a microphone preamplifier, the SSM2019 can be used as a very low noise summing amplifier. Such a circuit is particularly useful when many medium impedance outputs are summed together to produce a high effective noise gain. The principle of the summing amplifier is to ground the SSM2019 inputs. Under these conditions, Pins 1 and 8 are ac virtual grounds sitting about 0.55 V below ground. To remove the 0.55 V offset, the circuit of Figure 5 is recommended. A2 forms a "servo" amplifier feeding the SSM2019 inputs. This places Pins l and 8 at a true dc virtual ground. R4 in conjunction with C2 removes the voltage noise of A2, and in fact just about any operational amplifier will work well here since it is removed from the signal path. If the dc offset at Pins l and 8 is not too
critical, then the servo loop can be replaced by the diode biasing scheme of Figure 5. If ac coupling is used throughout, then Pins 2 and 3 may be directly grounded.
+ IN - IN R2 6.2k C1 R3 0.33 F 33k R4 5.1k A2 C2 200 F TO PINS 2 AND 3 IN4148 V R5 10k
Figure 5. Bus Summing Amplifier
OUTLINE DIMENSIONS 8-Lead Plastic Dual In-Line Package [PDIP] (N-8)
Dimensions shown in inches and (millimeters)
0.375 (9.53) 0.365 (9.27) 0.355 (9.02)
8 5
16-Lead Standard Small Outline Package [SOIC] Wide Body (RW-16)
Dimensions shown in millimeters and (inches)
10.50 (0.4134) 10.10 (0.3976)
1
4
0.295 (7.49) 0.285 (7.24) 0.275 (6.98) 0.325 (8.26) 0.310 (7.87) 0.300 (7.62) 0.015 (0.38) MIN SEATING PLANE 0.060 (1.52) 0.050 (1.27) 0.045 (1.14)
16
9
7.60 (0.2992) 7.40 (0.2913) 0.150 (3.81) 0.135 (3.43) 0.120 (3.05)
1 8
0.100 (2.54) BSC 0.180 (4.57) MAX 0.150 (3.81) 0.130 (3.30) 0.110 (2.79) 0.022 (0.56) 0.018 (0.46) 0.014 (0.36)
10.65 (0.4193) 10.00 (0.3937)
0.015 (0.38) 0.010 (0.25) 0.008 (0.20)
1.27 (0.0500) BSC 0.30 (0.0118) 0.10 (0.0039) 0.51 (0.0201) 0.33 (0.0130)
2.65 (0.1043) 2.35 (0.0925)
0.75 (0.0295) 0.25 (0.0098)
45
COPLANARITY 0.10
SEATING PLANE
0.32 (0.0126) 0.23 (0.0091)
8 0
1.27 (0.0500) 0.40 (0.0157)
COMPLIANT TO JEDEC STANDARDS MO-095AA CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN
COMPLIANT TO JEDEC STANDARDS MS-013AA CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN
8-Lead Standard Small Outline Package [SOIC]* Narrow Body (RN-8)
Dimensions shown in millimeters and (inches)
5.00 (0.1968) 4.80 (0.1890)
8 5 4
4.00 (0.1574) 3.80 (0.1497)
1
6.20 (0.2440) 5.80 (0.2284)
1.27 (0.0500) BSC 0.25 (0.0098) 0.10 (0.0040) COPLANARITY SEATING 0.10 PLANE
1.75 (0.0688) 1.35 (0.0532) 8 0.25 (0.0098) 0 0.19 (0.0075)
0.50 (0.0196) 0.25 (0.0099)
45
0.51 (0.0201) 0.33 (0.0130)
1.27 (0.0500) 0.41 (0.0160)
COMPLIANT TO JEDEC STANDARDS MS-012AA CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN
*Consult factory for availability.
-8-
REV. 0
PRINTED IN U.S.A.
C02718-0-2/03(0)
SSM2019
VOUT

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